Nanodot Based Memory Works 100x Faster
Researchers created nanodot based memory 10-100 times faster than today’s mainstream charge-storage memory device. The system features non-conducting material coating which is combined with distinct silicon nanodots – each about three nano meters. Nonetheless, every nanodot performs as a single memory bit. The mentioned layer has further been covered with an emaciated metallic layer functioning as a metal gate. The data writing and erasure demonstrate precision and reliability as the device utilizes extremely short, clear bursts of green laser light. Developers think this new technology to be able to sync neatly with the devices that incorporate support for CMOS tech. This storage solution assures enhanced stability and robustness.
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